Abstract Based on the finite element simulation method, the temperature field distribution characteristics of high pressure synthetic diamond process are revealed. Under the approximation of neglecting large deformations, numerical simulation allows us to observe quantitative information that cannot be actually measured under high voltage extreme conditions. Intuitive numerical results show that in the "side-heat" cavity, the temperature of the peripheral graphite tube is the highest, the center is the second, and the two ends are the lowest. This provides a theoretical basis for further process design. It has been found that the temperature difference in the "side heating" high pressure synthesis chamber is lower than the "direct heating type" by nearly 25%. (Diamond and Abrasives Engineering, 2009, Issue 2)
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